Remember forward bias characteristics p+.By increasing the doping in the p region only.How can we make a hole injector from a pn diode?.V I h+ p n e- How can we increase the minority carrier concentration near the depletion region edge? V I e- p n h+ I V I0 Test: True-False pn If we only increase then |I0| will still increase. If minority carrier concentration can be increased near the depletion region edge, then I0 will increase.If minority carrier concentration can be increased what will happen to I0?.
V I e- p n h+ I np and/or pn V I0 Test: Multiple choice Caused by minority carriers swept across the junction.I0 small I V I0 How can we make a BJT from a pn diode?.Because the current consist of minority carriers injected across the depletion region.Because the bias across the depletion region is small.Test: Multiple choice Why is the reverse bias current of a pn diode small? V I p n I V I0 How can we make a BJT from a pn diode? These electrons will attempt to recombine with the majority base holes, however, because the base is physically thin and lightly doped, only a small percentage of the injected electrons will recombine with base holes and exit the base terminal back to ground.Holes and electrons determine device characteristics Three terminal device Control of two terminal currents Bipolar Junction transistor Amplification and switching through 3rd contact As long as there is sufficient potential from the emitter supply, the electrons will be pushed into the base. The base-emitter depletion creates an energy hill just as it did with a single PN junction. From the left side of the diagram, electrons exit the emitter supply and enter the N emitter. \): Forward-reverse bias, electron flow.Įlectron flow will facilitate this explanation so we'll draw the current directions using dashed lines.
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